A substance used to produce a desired electrical characteristic in a semiconductor.
- By changing the electrochemical current, the electrolyte composition, and the dopant characteristics of the wafer, one can tune the average diameter of the pores from a few nanometers to several micrometers.
- Essentially, the losses introduced by the microstructure (surface scattering and so on) should not exceed the reduction in loss we achieve by eliminating dopants and therefore reducing material scattering.
- Due to the original content of the iron dopant and the size of the resist pattern, the diameter of the particle can be effectively controlled well below the lithography limit.
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